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Authors : Domenico Lo Verde and Dr. Cesare Ronsisvalle

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Born  in Catania,  Italy  in 1961 Diploma in Electronics and Telecommunication in 1980, I.T.I.S. G. Marconi, Catania,  Italy Started to work in  semiconductor   industry  in 1983 in  STMicroelectronics  Catania,  Italy       R&D  dept   as   process   engineer . High power devices,  MosFet  and  Bipolar  devices From 1990  till  1999 in  STMicroelectronics , Catania,  Italy . R&D  dept   as  design  engineer , High power devices,  MosFet  and  Bipolar  devices   From 1999  till  2005, in  Nuova Mistral  in Latina,  Italy . R&D  dept . Manager,  development  of innovative  packages  for power  semiconductors  and technologies WLCSP for power COB  From 2005  till  2007, in  Atmel   nts  in Newcastle, UK. Senior Design  engineer . High integration CMOS technologies 90 and 120nm  nodes From 2007  till  2009, in  NXP  Semiconductors   Manchester, UK. Senior Design  engineer . Development Low  voltage   MosFet  in standard trench and SG technology for automotive AEC-Q100 application  From 2009  till  2014, in  Diotec   Semiconductors   Heitersheim , Germany. R&D  dept . Manager,  development  of innovative standard and  schottky   diodes  technologies  From 2014  till  2017, in  Exagan , Grenoble, France. Senior Consultant  GaN   MosFet  technologies  development  front end and back-end From 2014  till  08/2018, in   Bruckewell  Technology  GmbH in Freiburg, Germany. Managing  Director  Europe R&D  development  innovative IGBT and  MosFet  technologies From 08/2018  till   today , in  Steifpower Technology Ltd.  Managing  Director        R&D  development  innovative IGBT and  MosFet  technologies 16  Patents Linkedin page: https://www.linkedin.com/in/dloverde/

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Born in Roma, Italy in 1956 Graduated in  Doc of Physics  in 1980, Catania University, Italy Started to work in semiconductor industry in 1981 at spin-off of  International Rectifier , Italy as a process engineer. High power devices: SCRs, Diodes From 1983 till 2011, joined at  STMicroelectronics , Catania, Italy. R&D dept. Technology development and design of power semiconductor devices: Diodes, BJTs, IGBTs, Power Mosfets, MCT(Mos-Controlled-Thyristor), MOS-GTO, ESBT(Emitter-Switching-Bipolar Transistor), Power Integration. From 2011 till 2012, at  Infineon Technologies  in Villach, Austria. Development and design of     Narrow Mesa IGBT.  From 2012 till 2016, R&D Director at the Research Center of  Fairchild Semiconductor  in Munich, Germany.        Narrow Mesa IGBTs, Super Junction Power Mosfets, Diodes. From 2016 till 2018, CTO at  Bruckewell Technology , Hsinchu, Taiwan From 2017 til 2018, senior consultant at  Huawei Research Center  in Nuremberg, Germay. Now, the CTO of  Steifpower .  25 Papers  presented   at  International  Conferences 19  Patents https://www.linkedin.com/in/cesare-ronsisvalle-b733b935/

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Outline of the presentation About  Steifpower  Technology IGBT Basic  Structures  and  Equivalent   Circuits IGBT  Structures  and  Evolution IGBT  Structures  Migration from Planar to Trench IGBT G6/G7  Mask   Process   Sequence IGBT Trade-off  Curves IGBT  Backside   Structures IGBT  Backside   Finishing  with Taiko  Process  for IGBT FS STD IGBT  Backside   Finishing  with Taiko  Process  for IGBT FS RC IGBT Assembly   IGBT Market Trend and Sharing 2015 - 2022 IGBT Future  Evolution Last  considerations   about   IGBTs Contacts

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About  Steifpower: Steifpower Technology is formed by a team of professional in power semiconductor industry in 2018, most of us have at least 15 - 30 years experience in semiconductor industry. We have our owned technology in design and manufacturing for advanced power semiconductor products.  Steifpower will initially focus on front-ended custom-design for advanced power semiconductor, and manufacturing is outsourced to qualified wafer foundry in Europe. Our products will be sold to major customers in power industry such as distributor, power device principals and dedicated research centre for advance power electronics.  Our major focus would be on new structural Transistor, Diodes, wideband gap materials for new generation power electronics.

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Our technologies: We offer a wide range of technologies in full range portfolio of power semiconductors (shown as below). We diversify of product development into 3 stages and will alter based on market trend and customer approach.

Super-Junction MOSFET (Cool MOS) Planar DMos Trench MOSFET Trench MOSFET (Shielded Gate) Power FinFET        (Lateral MOSFET)

Planar PT Planar NPT Planar FS        (Soft Punch-Through) Trench FS  (6th gen.) Narrow Mesa  (7th gen.)       (IEGT)

Low Leakage Barriers Low Vf Barriers Hot leakage High ESD Capability High Surge Current Capability)

SiC Schottky JBS       (650V/1200V Sky Diode) SiC Schottky PBR High Performances       (Under development) GaN MOSFET Cascode GaN MOSFET Depletion Mode

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Breakdown voltage of  an  open base transistor: BV CEO  < BV CBO

0.400kV – 6.5kV in Silicon Advantages : Voltage  controlled Bipolar  device Low On  resistance Good   switching   times Disadvantages : Turn-off  Current   tail  (Not in the 7th gen.)

The IGBT  S tructures   has   E mbedded  T hree  Devices: PNP  BJT PiN   diode Thyristor

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Equivalent circuit & Output characteristics

3000
VGE = 20V
— VGE = 15V
2700
- VGE = 12V
— — VGÉ = IOV
2400
VGÉ = 9V
— VGÉ = 8V
2100
1800
Sl 500
1200
900
600
300
1,5 2,5 3,5 4,5 5,5 6,5
VCE [V]

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Low Turn-off energy                  lower  t

Larger  unipolar  fall down Faster current tail

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Hole  Accumulation  at „Bottleneck“  Dramatic   Increase   of  Carrier  Concentration  on Front Side and in  the  Volume   Better   Conductivity Reduced  Vce( sat )

Evolution  of   the  IGBT  Structures   from  Planar  to  Trench Cells

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Source  contact Source  layer Body  layer MOS Channel Active  cell Dead  cell Source  contact Source  layer Body  layer MOS Channel

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Benefits of NPT over PT No Lifetime Control Process   Simpler Process Positive Temp Coefficient    Thermal Stability & Easy parallel operation Ruggedness    Large SOA (Safe Operating Area)

Benefits of Trench IGBT over Planar IGBT High current density   Reduce chip size !! Increase current rating of module with smaller chip

Benefits of Field Stop over NPT Buffer layer terminates electric field in a shorter distance  	 enables reduced die thickness Reduced die thickness   Reduced Vce(sat) for the same Eoff Buffer layer improves minority carrier recombination        Reduced Eoff due to reduced tail current       Retains NPT capability: Positive temperature coefficient    Thermal Stability & Easy parallel operation Ruggedness    Large SOA (Safe Operating Area)

Evolution of the IGBT  Structures   from  PT Planar to Narrow Mesa

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Channel Stopper Masking (mask=    100 ) JTE Masking (mask=   150 ) Active Area Masking.  (mask=  200 ) JFET Masking (mask=  300 ) Trench Masking  (mask=   400 ) Poly   Masking  (mask=  500 ) P++ Masking (mask=  600 ) N+ Masking  (mask=  650 ) CONTACT Masking  (mask=  700 ) Metal  Masking   (mask=  800 ) Passivation Masking (mask=  900 )

11 Mask Process Trench Technology RC Diode Process available Low  VCESat High Current Density VCEs  0.400kV – 6.5kV

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Evolution of the IGBT  Structures   Injection  Enhancement

Mwidth=2 1.3639199999999998 1.4088999999999914 1.51315 1.63412 15.7896 12.544299999999998 8.3160000000000007 6.0601899999999755 Mwidth=1.2 1.29444 1.3309500000000001 1.4139399999999895 1.50661 16.469199999999862 13.2257 9.0025000000000048 6.6570299999999945 Mwidth=0.8 1.2393299999999914 1.2687899999999999 1.3344199999999999 1.4049999999999914 17.289599999999844 14.0518 9.8209300000000006 7.4467900000000133 Mwidth=0.5 1.1774199999999999 1.19902 1.2459299999999895 1.2941199999999999 18.6629 15.416 11.1722 8.8258500000000026

Impact of the Mesa width on the  Eoff / Vcesat  tradeoff

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Tdepth=7 1.1385799999999999 1.1547400000000001 1.1892 1.2235299999999893 18.7028 15.668000000000001 11.6873 9.4936000000000007 Tdepth=6 1.1548400000000001 1.1732800000000001 1.2129199999999998 1.2529199999999998 18.765499999999811 15.6243 11.5061 9.231309999999997 Tdepth=5 1.1774199999999999 1.19902 1.2459299999999891 1.2941199999999999 18.6629 15.416 11.1722 8.8258500000000026 Tdepth=4 1.2111399999999932 1.2374499999999937 1.2954899999999998 1.3567899999999999 18.308900000000001 14.9818 10.6304 8.19 Tdepth=3 1.2672599999999998 1.3015599999999998 1.37906 1.46465 17.654699999999988 14.247 9.7855600000000003 7.2719100000000001

Impact of the Trench Depth on the  Eoff / Vcesat  tradeoff

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G ate
c
B
Emettitore
Emboded Diode
Collettore
Wafer Thickness
50 - 150um

c
B
Emettitore
Collettore
Wafer Thickness
50 - 150um

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IGBT Backside Finishing with Taiko  Process  for IGBT FS STD

Mount
Glass wafer
De Mount
Back
Grindin
BSG wheel
Taiko Grind
Spin Etcher
SEZ
Ion
Grinding Wheel
S Water
BG rape
Wafer
Pre-Clean
Back Metal
(SEZ or ICP etch)
Inspection
Inspection
Tube
or Laser anneal
Mount
Dicing Tape
Ring Frame
o
o
Glass wafer
and UV Resin
Device
Wafer
Die Probe
Edge Trim
Back
Im lantation
WF ID sort
Dicing

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IGBT Backside Finishing with Taiko  Process  for IGBT FS RC

Mount
Glass wafer
Photoresist
Development
o
o
Pre-Clean
(SEZ or ICP etch)
Back
Grindin
BSG wheel
Silicon
Plasma Etch
Taiko Grind
N+ Diode Implant
Ion
O
Spin Etcher
SEZ
Ion
Grinding Wheel
S Water
BG rape
Wafer
Photoresist
Plasma Removal
Back
1m lantation
De Mount
Glass wafer
and UV Resin
Device
Wafer
Photoresist Spin
o
Inspection
Edge Trim
ackside Exposur
Tube or Laser anneal
Dicing
Back Metal
o
ID sort
Die
Probe
Inspection
o
Mount
Dicing Tape
Ring Frame

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IGBT FS G6 Wafers After Backside Finishing

650V and 1350V IGBT FS G6 Installed for Taiwan Customer

Confidential information, only limited to receiver internal usage and cannot distribute without  Steifpower  permission

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IGBT  Discretes   Main  Assembly  Packages

D 2 Pack Medium  Current  – High Voltage

TO-264 High  Current  –  Very  High Voltage

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Very  High  Current  –  Very  High Voltage

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(PKG. LINE)
PIN I
o
(TSIOMER NAME:
DEVICE TYPE:
DIE SIZE: See 1st
II
II
II
Die2
——g_ul
1
2
PKG. TYPE: (T0247 31.)
31.
UFPARTNO. N/A
PAD SIZE: 14.021x160)3mm
THICKNESS:
IJFMATERIA[.:
SCALE: 7/1
REX'. :
CUSWMER.
APPROVED BY
DRAW BY:
CHECK BY:
APPROVAL:
3
DAIE
DIE THK. A1 SIZE:
OPEN"MPP: um
WIRES: 4
LONGEST WIRE LENGTH: P}
SHORTFST WIRE LENGTH: 231 mil Pl
COMMEVIS: Gnd Bond lx• supplied by custortu•r. thanks.

TO247 Lead Frame IGBT FS RC Chip IGBT FS RC Assembly Plan in TO-247

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IGBT FS STD Assembly  Copacking  in Package TO-247 3L

TO247 Lead Frame FRD  Diode  Chip IGBT FS STD Chip IGBT FS STD  Copacking  Assembly Plan in TO-247

IGBT FS STD  Copacked   Assembled  in TO-247

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IGBT FS STD Assembly  Modules   Copacking  with FRD  Diodes

Copper base plate A IN
Connection area
Copper heat sink
IGBT
Diode

IGBT FS STD  Copacking  Assembly Plan in  HiPak   Module

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IGBT Market Trend and Sharing 2015 - 2022

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Total IGBT market evolution by application for 2016 -
6
5
4
2016
2017
2022
2022
2018
EV/HEV
2019
Motors
2020
2021
Others (detailed in the report)

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IGBT technology evolution forecast
201
SiC IGBT
(Around 2025)
Infineon
CREE +
Superjunction IGBT
(Around 2025)
P-ring FS+ Trench
Fuji Electric
(Before 2020)
Advanced HiGT
HITACHI
Trench FS with split
gate
(Around 2020)

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According to Nakagawa’s theory, in order to maximize the conductivity  modulation, then decrease the   V ce (sat ), it needs to minimize the Injection  efficiency of holes at the cathode side. That is, to maximize the ratio                                DC/W   as much as possible !!! This means, to use narrow mesa and larger pitch ! Anyway, the design of gen.7 and further is not as easy as it seems: Many other issues has to be considered, then a special care has to be  taken in the design !

Steifpower   is   already   working  on a  very   novel  gen.8 with  its   own  technology.  From the  very  first  simulation   outcomes ,  this  new  version   will  be a big step  ahead  the gen.7 !!

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Final considerations About IGBT Technologies

At the moment the market  is   dominated  by gen.4, 5 and 6. Just  few   players   have   industrialized  gen.7 (IFX, On-Semi, Toshiba,  Mitsu , Fuji) Some big  players  (i.e. ABB) are  still   struggling  to  industrialize  Trench  structures There’s   still  some room for  further  improvement of IGBT  technologies

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Email:  domenico.lv@steifpower.com              Tel: +39 392 4640 747              cesare.rv@steifpower.com                            Tel: +39 339 7457 199 Company Website:  https://www.steifpower.com

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PowerPoint Presentation

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 Email:  domenico.lv@steifpower.com              Tel: +39 392 4640 747              cesare.rv@steifpower.com                            Tel: +39 339 7457 199 Company Website:  https://www.steifpower.com

PowerPoint Presentation

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